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| TBB1010 Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier ADE-208-1607B (Z) 3rd. Edition Feb. 2003 Features * * * * * Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x2 Suitable for World Standard Tuner RF amplifier. Very useful for total tuner cost reduction. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. * Provide mini mold packages; CMPAK-6 Outline CMPAK-6 6 5 4 2 1 3 1. Drain(1) 2. Source 3. Drain(2) 4. Gate-1(2) 5. Gate-2 6. Gate-1(1) Notes: 1. 2. Marking is "KM". TBB1010 is individual type number of HITACHI TWIN BBFET. TBB1010 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg *3 Ratings 6 +6 -0 +6 -0 30 250 150 -55 to +150 Unit V V V mA mW C C Notes: 3. Value on the glass epoxy board (50mm x 40mm x 1mm). Rev.2, Feb. 2003, page 2 of 10 TBB1010 Electrical Characteristics (Ta = 25C) The below specification are applicable for FET1 and FET2 unit Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Symbol Min V(BR)DSS 6 Typ -- -- -- -- -- -- -- 16 29 2.1 1.4 0.03 30 1.1 Max -- -- -- +100 +100 1.1 1.1 20 -- 2.5 1.8 0.05 -- 1.8 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions ID = 200 A, VG1S = VG2S = 0 IG1 = +10 A, VG2S = VDS = 0 IG2 = +10 A, VG1S = VDS = 0 VG1S = +5 V, VG2S = VDS = 0 VG2S = +5 V, VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V, ID = 100 A VDS = 5 V, VG1S = 5 V, ID = 100 A VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 120 k VDS = 5 V, VG1 = 5 V, VG2S =4V RG = 120 k, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S =4 V, RG = 120 k f = 1 MHz VDS = VG1 = 5 V, VG2S = 4 V RG = 120 k, f = 200 MHz V(BR)G1SS +6 V(BR)G2SS +6 IG1SS IG2SS VG1S(off) VG2S(off) ID(op) |yfs| Ciss Coss Crss PG NF -- -- 0.6 0.6 12 24 1.7 1.0 -- 25 -- Rev.2, Feb. 2003, page 3 of 10 TBB1010 Test Circuits * DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) Measurment of FET1 Gate 1 Gate 2 Open VG2 VG1 RG ID VD A Drain Source Open Measurment of FET2 Gate 2 VG2 Open VG1 Gate 1 RG A Open Source Drain ID VD Rev.2, Feb. 2003, page 4 of 10 TBB1010 * Equivalent Circuit No.1 Drain(1) No.6 Gate-1(1) No.2 Source BBFET-(1) BBFET-(2) No.3 Drain(2) No.5 Gate-2 No.4 Gate-1(2) * 200 MHz Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input (50 ) 1000p 36p L1 1000p 47k TWINBBFET L2 1000p 47k Output (50 ) 10p max 1000p 1SV70 RG 120k RFC 1SV70 1000p V D = V G1 Unit : Resistance () Capacitance (F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns Rev.2, Feb. 2003, page 5 of 10 TBB1010 Maximum Channel Power Dissipation Curve Typical Output Characteristics 25 R G= 10 82 0k 0 k k Pch* (mW) 400 I D (mA) V G2S = 4 V V G1 = VDS 20 300 Channel Power Dissipation 15 Drain Current 200 10 100 5 0 50 100 150 Ta (C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 5 V DS (V) * Value on the glass epoxy board (50mm x 40mm x 1mm) Forward Transfer Admittance |y fs | (mS) 25 Drain Current vs. Gate1 Voltage V DS = 5 V R G = 120 k 4V 50 Forward Transfer Admittance vs. Gate1 Voltage I D (mA) 20 V DS = 5 V R G = 120 k 40 f = 1 kHz 30 4V 15 3V 3V Drain Current 10 2V 20 2V 5 VG2S = 1 V 10 VG2S = 1 V 0 1 2 Gate1 Voltage 3 V G1 4 (V) 5 0 1 2 3 4 V G1 (V) 12 k 0 15 0k 18 5 Gate1 Voltage Rev.2, Feb. 2003, page 6 of 10 TBB1010 Drain Current vs. Gate Resistance 30 25 20 15 10 5 0 10 Input Capacitance Ciss (pF) Input Capacitance vs. Gate2 to Source Voltage 4 Drain Current I D (mA) V DS = 5 V V G1 = 5 V V G2S = 4 V 3 2 V DS = 5 V V G1 = 5 V R G = 120 k f = 1 MHz 0 1 2 3 4 1 20 50 100 200 500 1000 0 Gate Resistance R G (k) Gate2 to Source Voltage V G2S (V) Power Gain vs. Gate Resistance 40 Noise Figure NF (dB) Noise Figure vs. Gate Resistance 4 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 35 Power Gain PG (dB) 3 30 25 20 15 10 10 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k) 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k) Rev.2, Feb. 2003, page 7 of 10 TBB1010 Gain Reduction vs. Gate2 to Source Voltage 50 Gain Reduction GR (dB) 40 V DS = V G1 = 5 V R G = 120 k 30 20 10 0 0 1 2 3 4 Gate2 to Source Voltage V G2S (V) Rev.2, Feb. 2003, page 8 of 10 TBB1010 Package Dimensions As of July, 2002 Unit: mm 2.0 0.2 1.3 0.2 (0.65) (0.65) (0.425) 1.25 0.1 (0.425) 0.15 - 0.05 + 0.1 2.1 0.3 0 - 0.1 6-0.2 + 0.1 - 0.05 (0.2) 0.9 0.1 Hitachi Code JEDEC JEITA Mass (reference value) CMPAK-6 -- Conforms 0.006 g Rev.2, Feb. 2003, page 9 of 10 TBB1010 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2003. All rights reserved. Printed in Japan. Colophon 7.0 Rev.2, Feb. 2003, page 10 of 10 |
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